Plasma enhanced chemical vapor deposition of epitaxial mercury telluride
- 23 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (21) , 1738-1740
- https://doi.org/10.1063/1.98508
Abstract
Epitaxial layers of mercury telluride were deposited onto cadmium telluride substrates at 85 °C using a glow discharge to enhance the reaction between dimethylmercury and dimethyltelluride. Hall-effect measurements showed the material to be n type with room-temperature and 77 K carrier concentrations of 5.0×1017 and 1.0×1017 cm−3, respectively: room-temperature Hall mobility was 22 000 cm2/V s and 77 K mobility was 52 000 cm2/V s.Keywords
This publication has 13 references indexed in Scilit:
- Low-temperature metalorganic growth of CdTe and HgTe films using ditertiarybutyltellurideApplied Physics Letters, 1986
- Negative differential resistances from Hg1−xCdxTe-CdTe single quantum barrier heterostructuresApplied Physics Letters, 1986
- Epitaxial growth of HgTe by precracking metalorganic mercury and tellurium compoundsApplied Physics Letters, 1986
- Photochemical organometallic vapor phase epitaxy of mercury cadmium tellurideApplied Physics Letters, 1986
- Proposal of and Numerical Simulation of Hg1-xCdxTe Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 1986
- Photon assisted OMVPE growth of CdTeJournal of Crystal Growth, 1985
- CMT: The material for fiber optical communication devicesJournal of Crystal Growth, 1985
- Hg1−xCdxTe-Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applicationsJournal of Applied Physics, 1985
- Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancementJournal of Applied Physics, 1985
- Photosensitisation: A stimulant for the low temperature growth of epitaxial HgTeJournal of Crystal Growth, 1984