Photosensitisation: A stimulant for the low temperature growth of epitaxial HgTe
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 188-193
- https://doi.org/10.1016/0022-0248(84)90415-9
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- A new MOVPE technique for the growth of highly uniform CMTJournal of Crystal Growth, 1984
- A study of transport and pyrolysis in the growth of Cd Hg1ȡTe by MOVPEJournal of Crystal Growth, 1983
- The growth of CdxHg1−xTe using organometallicsJournal of Vacuum Science and Technology, 1982
- The growth by MOVPE and characterisation of CdxHg1−xTeJournal of Crystal Growth, 1981
- Liquidus isotherms, solidus lines and LPE growth in the Te-rich corner of the Hg-Cd-Te systemJournal of Electronic Materials, 1980
- Liquid Phase Growth of HgCdTe Epitaxial LayersJournal of the Electrochemical Society, 1980
- Comparison of Hg0.6Cd0.4Te LPE layer growth from Te-, Hg-, and HgTe-rich solutionsIEEE Transactions on Electron Devices, 1980
- Ideal CdTe/HgTe superlatticesJournal of Vacuum Science and Technology, 1979
- The pressure-temperature phase diagrams of the HgTe and Hg1?x CdxTe systemsJournal of Materials Science, 1977
- Hg-Cd-Te phase diagram determination by high pressure refluxJournal of Electronic Materials, 1976