Morphology dependent platinum silicide formation in oxygen ambient
- 16 November 1994
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 146 (1) , 385-392
- https://doi.org/10.1002/pssa.2211460132
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Marker and radioactive silicon tracer studies of PtSi formationJournal of Applied Physics, 1992
- Pt2Si formation: Diffusion marker and radioactive silicon tracer studiesJournal of Applied Physics, 1990
- Chemical reactions at Pt/oxide/Si and Ti/oxide/Si interfacesJournal of Vacuum Science & Technology A, 1985
- Growth kinetics of platinum silicideJournal of Applied Physics, 1983
- The oxygen effect in the growth kinetics of platinum silicidesJournal of Applied Physics, 1981
- Platinum silicide formation under ultrahigh vacuum and controlled impurity ambientsJournal of Applied Physics, 1981
- Growth rates for Pt2Si and PtSi formation under UHV and controlled impurity atmospheresApplied Physics Letters, 1980
- Pt2Si and PtSi formation with high-purity Pt thin filmsApplied Physics Letters, 1977
- Kinetics and mechanism of platinum silicide formation on siliconApplied Physics Letters, 1974
- Interdiffusion and compound formation in thin films of Pd or Pt on si single crystalsPhysica Status Solidi (a), 1971