Growth rates for Pt2Si and PtSi formation under UHV and controlled impurity atmospheres

15 March 1980

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 36 (6) , 417-419
https://doi.org/10.1063/1.91522

Abstract

Platinum silicides have been prepared by depositing Pt thin films under ultrahigh vacuum (UHV) and controlled impurity atmospheres including a range of O₂ partial pressures. The substrates and silicide films were analyzed with Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES). Growth of the silicide films was observed under UHV in real time with RBS. Growth rates (i.e. diffusivities) for Pt₂Si and PtSi formation were observed to be one to three orders of magnitude higher than previously reported. Increasing partial pressures of O₂ during Pt depositions caused the growth rates to decrease by up to a factor of 20 and caused disruption of the normal phase growth sequence; partial pressures of N₂ and Ar had no effect.

Keywords

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