Tin-related shallow donor in indium selenide
- 1 June 1988
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 46 (2) , 125-129
- https://doi.org/10.1007/bf00615920
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescenceApplied Physics A, 1987
- Free Carrier Absorption in n‐Type Indium SelenidePhysica Status Solidi (b), 1985
- Segregation of dopants in melt-grown indium selenide crystalsJournal of Applied Physics, 1984
- Improvement of growth parameters for Bridgman-grown InSe crystalsJournal of Crystal Growth, 1984
- Electron scattering mechanisms in-type indium selenidePhysical Review B, 1984
- Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopyApplied Physics A, 1983
- Cyclotron resonance studies on bulk and two-dimensional conduction electrons in InSeSolid State Communications, 1982
- Large InSe monocrystals grown from a non-stoichiometric meltJournal of Crystal Growth, 1977