Surface processes responsible for reflectance-anisotropy oscillations during molecular beam epitaxy growth of GaAs(001)
- 1 August 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 337 (1-2) , 103-108
- https://doi.org/10.1016/0039-6028(95)00540-4
Abstract
No abstract availableKeywords
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