The use of Schottky barrier diodes for the detection of surface contamination and damage in the fabrication of GaAs MESFETS
- 31 December 1985
- Vol. 35 (12) , 543-546
- https://doi.org/10.1016/0042-207x(85)90313-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Surface damage caused by electron-beam metallization of high open-circuit voltage solar cellsIEEE Electron Device Letters, 1984
- The effects of plasma and ion beam processing on the properties of n-GaAs Schottky diodesVacuum, 1984
- Evidence for the creation of the main electron trap in bulk GaAsApplied Physics Letters, 1983
- Investigation of CVD silicon nitride encapsulation for gallium arsenideInternational Journal of Electronics, 1982