Current hysteresis due to changes in magnetization of magnetic tunnel junctions by spin-polarized current
- 1 March 2001
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 53 (5) , 625-631
- https://doi.org/10.1209/epl/i2001-00198-7
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Voltage dependence of the magnetic state in magnetic tunnel junctionsJournal of Applied Physics, 2000
- Unified approach to the tunnel magnetoresistance and the non-equilibrium exchange interactionEurophysics Letters, 2000
- Current-Driven Magnetization Reversal and Spin-Wave Excitations in CoCuCo PillarsPhysical Review Letters, 2000
- Electronic noise in magnetic tunnel junctionsJournal of Applied Physics, 1999
- Spin-polarized tunnel current in magnetic-layer systems and its relation to the interlayer exchange interactionPhysical Review B, 1999
- Magnetization Reversal in Micron-Sized Magnetic Thin FilmsPhysical Review Letters, 1998
- In situ X-ray investigations of thin film growthThin Solid Films, 1998
- Experimental study of magnetization reversal processes in nonsymmetric spin valveJournal of Applied Physics, 1997
- Spin polarized tunneling in reactively sputtered tunnel junctionsJournal of Applied Physics, 1997
- Ruderman-Kittel-Kasuya-Yosida interaction across a tunneling junction out of equilibriumPhysical Review B, 1996