Nanometer resolution in luminescence microscopy of III-V heterostructures
- 16 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (16) , 1564-1566
- https://doi.org/10.1063/1.103154
Abstract
In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.Keywords
This publication has 11 references indexed in Scilit:
- Low-threshold electrically pumped vertical-cavity surface-emitting microlasersElectronics Letters, 1989
- Photon emission with the scanning tunneling microscopeZeitschrift für Physik B Condensed Matter, 1988
- Photon emission experiments with the scanning tunnelling microscopeJournal of Microscopy, 1988
- Scanning tunneling spectroscopy of oxygen adsorbates on the GaAs(110) surfaceJournal of Vacuum Science & Technology B, 1988
- Observation of Ga0.47In0.53As/InP Multiquantum Well Structure in Air by Scanning Tunneling MicroscopeJapanese Journal of Applied Physics, 1988
- Scanning tunneling microscope combined with a scanning electron microscopeReview of Scientific Instruments, 1986
- Chemisorption-induced defects at interfaces on compound semiconductorsSurface Science, 1983
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983
- Semiconductor material assessment by scanning electron microscopy*Journal of Microscopy, 1977
- Transport Properties of GaAs Obtained from Photoemission MeasurementsPhysical Review B, 1969