Thermally stable oxygen implant isolation of p-type Al0.2Ga0.8As
- 17 May 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (20) , 2536-2538
- https://doi.org/10.1063/1.109288
Abstract
High dose oxygen implantation was used to form high resistivity regions in p‐type Al0.2Ga0.8As. By achieving oxygen concentrations 30 times the grown‐in beryllium concentration we created Al0.2Ga0.8As layers with a sheet resistance of over 1010 Ω/⧠ that were stable to 900 °C. Samples implanted with a base dose of 2×1014 cm−2 showed an apparent activation energy for conduction of 0.67 eV after annealing at 800 °C.Keywords
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