Interaction of Be and O in GaAs
- 17 April 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (16) , 1540-1542
- https://doi.org/10.1063/1.101344
Abstract
Oxygen implanted at a concentration above that of the acceptors in p‐type GaAs is shown to create thermally stable, high‐resistivity material only in the case of Be doping in the GaAs. The effect is not seen for Mg, Zn, or Cd doping. Similarly, there is no apparent interaction of O with n‐type dopants (S or Si) in our measurements. The Be‐O complex in p‐type GaAs is a deep donor, creating material whose sheet resistivity shows an apparent thermal activation energy of 0.59 eV for a structure involving a thin layer (5000 Å) of oxygen compensated, Be‐doped GaAs on a semi‐insulating substrate.Keywords
This publication has 9 references indexed in Scilit:
- Implant Isolation of GaAsJournal of the Electrochemical Society, 1988
- Formation of thermally stable high-resistivity AlGaAs by oxygen implantationApplied Physics Letters, 1988
- Influence of oxygen implantation on the carrier concentration profile inp‐GaAsApplied Physics Letters, 1988
- Ion implantation in GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- AsGa antisite defects in GaAsPhysica B+C, 1983
- Direct evidence for the nonassignment to oxygen of the main electron trap in GaAsJournal of Applied Physics, 1979
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- Optical Properties of Cd-O and Zn-O Complexes in GaPPhysical Review B, 1968
- New Red Pair Luminescence from GaPPhysical Review B, 1968