Ion implantation in GaAs

This publication has 37 references indexed in Scilit:

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• Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors
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• Solid solubility limits in ion-implanted gallium arsenide
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• Effect of Dislocations on Sheet Carrier Concentration of Si-Implanted, Semi-Insulating, Liquid-Encapsulated Czochralski Grown GaAs
  Japanese Journal of Applied Physics, 1985
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• Doping of III–V compound semiconductors by ion implantation
  Nuclear Instruments and Methods in Physics Research, 1983
• The electrical characteristics of ion implanted compound semiconductors
  Nuclear Instruments and Methods, 1981
• Ion implantation in III–V compounds
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• Self-compensation of donors in high-purity GaAs
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• Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam Epitaxy
  Japanese Journal of Applied Physics, 1975