Ion implantation in III–V compounds
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 47 (1-4) , 99-115
- https://doi.org/10.1080/00337578008209195
Abstract
(1980). Ion implantation in III–V compounds. Radiation Effects: Vol. 47, No. 1-4, pp. 99-115.Keywords
This publication has 58 references indexed in Scilit:
- Laser reordering of implanted amorphous layers in GaAsSolid-State Electronics, 1978
- Microwave field-effect transistors from sulphur-implanted GaAsSolid-State Electronics, 1977
- Low-dose n-type ion implantation into Cr-doped GaAs substratesSolid-State Electronics, 1977
- Tellurium implantation in GaAsSolid-State Electronics, 1977
- Selenium implantation in GaAsSolid-State Electronics, 1977
- Multiple-energy proton bombardment in n+-GaAsSolid-State Electronics, 1977
- Electrical properties of be-implanted GaA1-xPxSolid-State Electronics, 1976
- Planar InSb photodiodes fabricated by Be and Mg ion implantationSolid-State Electronics, 1975
- Ion-implanted microwave field-effect transistors in GaAsSolid-State Electronics, 1975
- Mg and Be Ion Implanted GaAsJournal of Applied Physics, 1972