Surfaces of Vacuum-Deposited Silicon Oxide Films Studied by Auger Electron Spectroscopy

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Abstract
Silicon oxide films were deposited at a rate of 10–20 Å/min by heating commercial SiO powder in vacuums of 10-5 and 10-7 Torr and were analyzed by Auger electron spectroscopy (AES). To assign the Auger spectra with the energy range 50–100 eV from the film surfaces, AES was carried out on air-fractured and electron-irradiated surfaces of quartz. The spectra are attributed to a three-dimensional network of Si(–O–)4 tetrahedra; no spectra due to networks of Si(–Si–)4 tetrahedra were observed. These results were supported by low-energy electron energy-loss spectra observations. The Auger spectrum associated with oxygen vacancies was also observed, the intensity of this being higher for the films prepared in the higher vacuum. Thus the silicon oxide film surfaces are presumed to consist of a three-dimensional network of Si(–O–)4 tetrahedra with some oxygen vacancies.