High-performance GaAs MESFETs fabricated on misoriented
- 1 August 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (8) , 383-384
- https://doi.org/10.1109/55.751
Abstract
MBE (molecular-beam-epitaxially)-grown GaAs MESFETs with 1.3 mu m gate length were fabricated on aKeywords
This publication has 3 references indexed in Scilit:
- Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high-quality GaAs on (100) Si substratesApplied Physics Letters, 1988
- Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructureElectronics Letters, 1987
- GaAs MESFET's fabricated on InP substratesIEEE Electron Device Letters, 1987