32×32 planar IR photovoltaic mosaic arrays on sputtered CdxHg1−xTe epilayers
- 1 April 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (7) , 679-681
- https://doi.org/10.1063/1.94875
Abstract
Epitaxial n‐type CdxHg1−xTe layers on (111) CdTe substrates have been grown between 250 and 300 °C by sputtering deposition. The standard growth rate was nominally 2 μm/h for a thickness range from 10 to 30 μm. Typical electron concentration in CdxHg1−xTe layers with Cd composition of 0.34 is around of 2×1016 cm−3 with a Hall mobility of 20 000 cm2 V−1 s−1 at 77 K. Films can be converted to p type after annealing. We report for the first time the characteristics of backside illuminated 32×32 planar photovoltaic mosaic arrays processed on sputtered layers. Hybrid structures have been fabricated and evaluated; the preliminary results indicate the suitability of these mosaics for hybrid focal plane applications.Keywords
This publication has 8 references indexed in Scilit:
- Epitaxial growth of Hg0.7Cd0.3Te by laser-assisted depositionApplied Physics Letters, 1983
- Ion implantation in Hg1−xCdxTeNuclear Instruments and Methods in Physics Research, 1983
- Growth of high quality epitaxial CdxHg1-xTe films by sputter depositionJournal of Crystal Growth, 1982
- CdxHg1−xTe n-type layers grown by molecular beam epitaxyApplied Physics Letters, 1982
- Crystallographic properties of as grown CdxHg1-xTe epitaxial layers deposited by cathodic sputteringJournal of Crystal Growth, 1982
- Vapour phase epitaxy of CdxHg1-xTe using organometallicsJournal of Physics D: Applied Physics, 1981
- Optically pumped LPE-grown Hg1−xCdxTe lasersJournal of Electronic Materials, 1979
- Sputtered mercury cadmium telluride photodiode∗Infrared Physics, 1976