Highly anisotropic selective reactive ion etching of deep trenches in silicon
- 1 January 1994
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 23 (1-4) , 373-376
- https://doi.org/10.1016/0167-9317(94)90176-7
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Modeling of sloped sidewalls formed by simultaneous etching and depositionJournal of Vacuum Science & Technology B, 1989
- Secondary effects of single crystalline silicon deep- trench etching in a chlorine-containing plasma for 3- dimensional capacitor cellsMicroelectronic Engineering, 1986