Secondary effects of single crystalline silicon deep- trench etching in a chlorine-containing plasma for 3- dimensional capacitor cells
- 31 December 1986
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 5 (1-4) , 387-394
- https://doi.org/10.1016/0167-9317(86)90067-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Computer simulation of pattern profiles through physical etching with shadow, trenching, and redepositionMicroelectronic Engineering, 1985
- Scaling considerations and dielectric breakdown improvement of a corrugated capacitor cell for a future dRAMIEEE Transactions on Electron Devices, 1985
- A corrugated capacitor cell (CCC)IEEE Transactions on Electron Devices, 1984
- Computer simulation of line edge profiles undergoing ion bombardmentJournal of Vacuum Science & Technology A, 1983