A corrugated capacitor cell (CCC)
- 1 June 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (6) , 746-753
- https://doi.org/10.1109/t-ed.1984.21602
Abstract
A new MOS dynamic random access memory (dRAM) cell named "CCC" has been successfully developed based on a one-device cell concept. This CCC is characterized by an etched-moat storage-capacitor extended into the substrate, resulting in almost independent increase in storage capacitance CSof its cell size. A typical CSvalue of 60 fF has been obtained with 3 × 7 µm2CCC having a 4-µm deep moat and a capacitor insulator equivalent to 15 nm SiO2in thickness. The CCC is discussed in terms of its capacitance characteristics, dRAM operation with unit 32-Kbit array, some limiting factor to its closer packing, and future considerations.Keywords
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