Atomic oxygen and the thermal oxidation of silicon
- 11 April 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (15) , 1264-1265
- https://doi.org/10.1063/1.99676
Abstract
Both molecular and atomic oxygen have been postulated to react with silicon in the thermal oxidation process. At temperatures below 700 °C very little film growth is observed in molecular oxygen. When silicon is allowed to react thermally with a flowing afterglow containing atomic oxygen an enhancement in film growth is observed. Film growth in this mode exhibits little temperature activation and is speculated to be due to a constant concentration of atomic oxygen.Keywords
This publication has 10 references indexed in Scilit:
- Thermal Oxidation of Silicon in Dry Oxygen Growth‐Rate Enhancement in the Thin Regime: I . Experimental ResultsJournal of the Electrochemical Society, 1985
- Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime: II . Physical MechanismsJournal of the Electrochemical Society, 1985
- Application of EPR Spectroscopy to Oxidative Removal of Organic MaterialsJournal of the Electrochemical Society, 1983
- Evidence for a parallel path oxidation mechanism at the Si-SiO2 interfaceApplied Physics Letters, 1982
- Silicon Oxidation Studies: Some Aspects of the Initial Oxidation RegimeJournal of the Electrochemical Society, 1978
- A revised model for the oxidation of Si by oxygenApplied Physics Letters, 1978
- Kinetics of Thermal Growth of Ultra-Thin Layers of SiO[sub 2] on SiliconJournal of the Electrochemical Society, 1972
- Kinetics of Thermal Growth of Ultra-Thin Layers of SiO[sub 2] on SiliconJournal of the Electrochemical Society, 1972
- Thermodynamic Studies of High Temperature Equilibria. III. SOLGAS, a Computer Program for Calculating the Composition and Heat Condition of an Equilibrium Mixture.Acta Chemica Scandinavica, 1971
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965