Semiconductor-heterostructure-interface connection rules

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Abstract
We introduce a technique for the study of semiconductor heterostructures which is more general than the usual envelope-function approximation. This scheme accounts for material dependences in the Bloch functions, and also allows a full zone treatment of the constituent semiconductors. However, it involves only small-dimensional matrices, and thus remains computationally efficient. The presented formalism offers, at each energy, what can be considered a ‘‘best choice’’ flux-conserving interface connection rule between two semiconductors. As an illustration of the technique we consider the Γ-X scattering that occurs in GaAs/AlAs heterostructures.