Resonant tunneling through single layer heterostructures
- 28 September 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (13) , 1019-1021
- https://doi.org/10.1063/1.98817
Abstract
A new resonant tunneling process is discussed theoretically. The process relies on elastic intervalley transfers between different band minima, e.g., between Γ and X minima in a GaAs-AlAs system. Single layer GaAs-AlAs-GaAs heterostructures are analyzed. An effective mass envelope function approach is used, and a delta-function transfer potential at heterointerfaces is employed. A resonance in the transmission coefficient is clearly seen, which gives rise to a negative differential resistance region in the current-voltage characteristic.Keywords
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