Tunneling in In0.53Ga0.47As-InP double-barrier structures
- 26 January 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (4) , 212-214
- https://doi.org/10.1063/1.97664
Abstract
We report the first observation of tunneling through In0.53Ga0.47As‐InP double‐barrier structures at 77 and 4.2 K. The tunneling peaks occur at voltages close to the predicted values of the subband levels of the quantum well. The observed values are symmetrical about zero bias, unlike the results for similar structures in the AlGaAs‐GaAs system. The measured peak‐to‐valley ratios are low, being near to unity. This result is attributed to the presence of a large leakage current caused by conduction at the edges of the devices. We also report the observation of minima in the conductance curves due to the resonance levels in the continuum of states above the quantum well.Keywords
This publication has 18 references indexed in Scilit:
- Resonant tunneling through a double GaAs/AlAs superlattice barrier, single quantum well heterostructureApplied Physics Letters, 1986
- Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structuresApplied Physics Letters, 1986
- Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier WidthsJapanese Journal of Applied Physics, 1986
- Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperatureApplied Physics Letters, 1985
- Growth of InP, GaAs, and In0.53Ga0.47As by chemical beam epitaxyJournal of Vacuum Science & Technology B, 1985
- Quantum well oscillatorsApplied Physics Letters, 1984
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Tunneling in a finite superlatticeApplied Physics Letters, 1973