Ion beam processes in Si
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 243-250
- https://doi.org/10.1016/0168-583x(85)90561-0
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Mechanism for dynamic annealing during high flux ion irradiation in SiApplied Physics Letters, 1984
- High-resolution imaging of ion-implantation damage and mechanism of amortization in semiconductorsMaterials Letters, 1984
- Characterization of buried SiO2 layers formed by ion implantation of oxygenJournal of Electronic Materials, 1984
- Solid-phase-epitaxial growth and formation of metastable alloys in ion implanted siliconJournal of Vacuum Science & Technology B, 1983
- Interface structures during solid-phase-epitaxial growth in ion implanted semiconductors and a crystallization modelJournal of Applied Physics, 1982
- Solid-Phase-Epitaxial Growth in Ion-Implanted SiliconPhysica Status Solidi (a), 1982
- A mass-separating focused-ion-beam system for maskless ion implantationJournal of Vacuum Science and Technology, 1981
- FET fabrication using maskless ion implantationJournal of Vacuum Science and Technology, 1981
- Crystalline to amorphous transformation in ion-implanted silicon: a composite modelJournal of Applied Physics, 1978
- The influence of boron on the clustering of radiation damage in graphitePhilosophical Magazine, 1969