Impact Ionization Coefficients of 4H-SiC

This publication has 4 references indexed in Scilit:

• Anisotropy in breakdown field of 4H–SiC
  Applied Physics Letters, 2002
• Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
  Solid-State Electronics, 1999
• Ionization rates and critical fields in 4H silicon carbide
  Applied Physics Letters, 1997
• Ionization Rates for Electrons and Holes in Silicon
  Physical Review B, 1958