Negative photoconductivity of two-dimensional holes in GaAs/AlGaAs heterojunctions
- 15 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (6) , 609-611
- https://doi.org/10.1063/1.96088
Abstract
A negative photoconductivity is observed due to the two-dimensional (2D) holes at GaAs/Al0.5Ga0.5As heterojunctions under illumination by a red light-emitting diode below ∼6 K. The photoconductivity follows a nonexponential decay after the illumination is turned off. Quantum transport measurements are made to demonstrate explicitly that the photoconductivity is due to a decrease in the density and mobility of the 2D holes, and a model is proposed to explain the phenomenon.Keywords
This publication has 10 references indexed in Scilit:
- Nonexponential Relaxation of Conductance near Semiconductor InterfacesPhysical Review Letters, 1985
- Effect of Inversion Symmetry on the Band Structure of Semiconductor HeterostructuresPhysical Review Letters, 1984
- Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructuresApplied Physics Letters, 1984
- Fractional quantum Hall effect in a two-dimensional hole systemPhysical Review B, 1984
- Transient photoconductivity in selectively doped -type heterostructuresPhysical Review B, 1984
- Illumination stimulated persistent channel depletion at selectively doped Al0.3Ga0.7As/GaAs interfaceApplied Physics Letters, 1984
- Temperature dependence of the mobility of two-dimensional hole systems in modulation-doped GaAs-(AlGa)AsApplied Physics Letters, 1984
- Energy Structure and Quantized Hall Effect of Two-Dimensional HolesPhysical Review Letters, 1983
- Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentrationApplied Physics Letters, 1981
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979