High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition
- 22 November 2001
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 188 (1) , 333-336
- https://doi.org/10.1002/1521-396x(200111)188:1<333::aid-pssa333>3.0.co;2-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Back illuminated AlGaN solar-blind photodetectorsApplied Physics Letters, 2000
- Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaNJournal of Applied Physics, 1998
- P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor depositionJournal of Electronic Materials, 1998
- Characteristics of Mg‐Doped GaN Grown by Metallorganic Chemical Vapor DepositionJournal of the Electrochemical Society, 1997
- Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layersApplied Physics Letters, 1997