Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layers
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (1) , 56-58
- https://doi.org/10.1109/55.144950
Abstract
Effective hole mobility enhancements of 50% at room temperature and over 100% at 90 K, compared to all-Si controlled devices, are demonstrated by placing a buried epitaxial Ge/sub x/Si/sub 1-x/ layer 7.5 to 10.0 nm beneath the gate oxide of a PMOS transistor. Mobility degradation caused by misfit dislocations in the inversion region is seen in structures with GeSi/sub 1-x/ layers that exceed the equilibrium critical thickness.<>Keywords
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