Lateral short range ordering of step bunches in InGaAs/GaAs superlattices
- 15 February 2004
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 95 (4) , 1736-1739
- https://doi.org/10.1063/1.1640786
Abstract
In the present paper we report on structural investigations of fivefold superlattices which have been grown by means of metal organic chemical vapor deposition on vicinal GaAs(001) substrates. Cross-sectional transmission electron micrographs exhibit an initially flat and nonfaceted grooved surface, while step bunching occurs during subsequent growth stages with an inclined vertical inheritance approximately 45° off the (001) direction. A reconstructed sample cross section on the base of high resolution x-ray diffraction data qualitatively confirms the local morphology proved by transmission electron microscopy. Moreover, a line shape analysis of diffusely scattered intensity using Gauss profiles indicates a lateral short range ordering of step bunches.
This publication has 22 references indexed in Scilit:
- Morphology evolution during strained (In,Ga)As epitaxial growth on GaAs vicinal (100) surfacesApplied Physics Letters, 2003
- Dislocation strain field in ultrathin bonded silicon wafers studied by grazing incidence x-ray diffractionPhysical Review B, 2002
- High-performance InAs quantum-dot lasers near 1.3 μmApplied Physics Letters, 2001
- Interactions between Fluctuating Steps on Vicinal Surfaces: Edge Energy Effects in Reconstruction Induced FacetingPhysical Review Letters, 1997
- Simulation and Observation of the Step Bunching Process Grown on GaAs (001) Vicinal Surface by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1996
- Step-Bunching Instability of Vicinal Surfaces under StressPhysical Review Letters, 1995
- New Instability in Molecular Beam EpitaxyPhysical Review Letters, 1995
- Tunable generation of microscopic and mesoscopic step arrays on non-(100)-oriented GaAs: A new route to quantum wire structures by epitaxial growthJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Multi-Atomic Steps on Metalorganic Chemical Vapor Deposition-Grown GaAs Vicinal Surfaces Studied by Atomic Force MicroscopyJapanese Journal of Applied Physics, 1992
- Reversible Displacement Current Generation Due to Photochromism in a Spread Monolayer: Influence of Molecular OrientationJapanese Journal of Applied Physics, 1992