Doping of epitaxial silicon-behavior of solid solutions
- 31 July 1969
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 30 (7) , 1811-1821
- https://doi.org/10.1016/0022-3697(69)90249-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The semiconductor-to-metal transition in n-type siliconSolid State Communications, 1968
- Method for Determining Silicon Diffusion Coefficients in Silicon and in Some Silicon CompoundsPhysical Review Letters, 1966
- Diffusion of Phosphorus into SiliconJournal of the Physics Society Japan, 1962
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958
- Chemical Effects Due to the Ionization of Impurities in SemiconductorsThe Journal of Chemical Physics, 1953
- The computation of Fermi-Dirac functionsPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1938