Ultra-thin oxide reliability: searching for the thickness scaling limit
- 1 April 2000
- journal article
- research article
- Published by Elsevier in Microelectronics Reliability
- Vol. 40 (4-5) , 697-701
- https://doi.org/10.1016/s0026-2714(99)00281-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Polarity dependence of dielectric breakdown in scaled SiO/sub 2/Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Reliability projection for ultra-thin oxides at low voltagePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- New insights in the relation between electron trap generation and the statistical properties of oxide breakdownIEEE Transactions on Electron Devices, 1998