Reliability projection for ultra-thin oxides at low voltage
- 28 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effectsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin filmsJournal of Applied Physics, 1998
- Ultimate limit for defect generation in ultra-thin silicon dioxideApplied Physics Letters, 1997
- Silicon dioxide breakdown induced by SHE (substrate hot electron) injectionElectronics and Communications in Japan (Part II: Electronics), 1997
- Thin oxide thickness extrapolation from capacitance-voltage measurementsIEEE Transactions on Electron Devices, 1997
- Qbd− dependencies of ultrathin gate oxides on large area capacitorsMicroelectronic Engineering, 1997
- Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET'sIEEE Electron Device Letters, 1997
- Mechanism for stress-induced leakage currents in thin silicon dioxide filmsJournal of Applied Physics, 1995
- Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolationIEEE Transactions on Electron Devices, 1994