Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effects
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 613-616
- https://doi.org/10.1109/iedm.1994.383335
Abstract
A new method to determine ultra-thin gate oxide thicknesses of advanced CMOS devices from C-V characteristics is proposed. The method is based on numerical solutions of the Poisson equation including a first order correction for quantum mechanical effects. Unlike the commonly used C-V methods, this new approach results in a unique value of the gate oxide thickness independent of bias. An efficient and accurate gate oxide thickness determination that is suitable for automatic test procedures is achieved.Keywords
This publication has 8 references indexed in Scilit:
- PCIM: a physically based continuous short-channel IGFET model for circuit simulationIEEE Transactions on Electron Devices, 1994
- OPTIMA: A nonlinear model parameter extraction program with statistical confidence region algorithmsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1993
- MOSFET Models for VLSI Circuit SimulationPublished by Springer Nature ,1993
- MOSFET Two-Dimensional Doping Profile DeterminationPublished by Springer Nature ,1993
- Quantum-mechanical modeling of accumulation layers in MOS structureIEEE Transactions on Electron Devices, 1992
- A technical formula for determining the insulator capacitance in a MOS structureSolid-State Electronics, 1992
- Carrier transport near the Si/SiO2 interface of a MOSFETSolid-State Electronics, 1989
- Oxide-thickness determination in thin-insulator MOS structuresIEEE Transactions on Electron Devices, 1988