Resistivity decrease due to electron spin resonance in the metallic region of heavily phosphorous doped silicon
- 15 October 1975
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 17 (8) , 1017-1019
- https://doi.org/10.1016/0038-1098(75)90244-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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