Spin-Dependent Conductivity of Phosphorus-Doped Silicon in the Intermediate Concentration Region
- 1 April 1974
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 36 (4) , 1049-1057
- https://doi.org/10.1143/jpsj.36.1049
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Resistivity Decrease Due to Donor Spin Resonance in n-Type GermaniumJournal of the Physics Society Japan, 1972
- Electron Spin Resonance Studies of Interacting Donor Clusters in Phosphorus-Doped SiliconJournal of the Physics Society Japan, 1972
- The Spin Dependent Conductivity in P-Doped SiJournal of the Physics Society Japan, 1971
- Spin Energy Transfer from Donor Spin System to Mobile Electron System in P-Doped SiJournal of the Physics Society Japan, 1971
- Microwave hot electron effect and resistivity decrease due to donor spin resonance in P-doped Si.Solid State Communications, 1970
- Bolometric Detection of ESR in P-Doped Si at Low TemperatureJournal of the Physics Society Japan, 1970
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967
- Electron correlations in narrow energy bandsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1963
- Dynamical Properties ofs-dInteractionProgress of Theoretical Physics, 1959
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958