Stark widths and shifts of singly ionized silicon spectral lines

Stark widths and shifts of Si ii lines from five visible multiplets: (1) $3p^2{}_{}{}^2{}_{}{}^{}D-4p{}_{}{}^2{}_{}{}^{}P_{}^o{}_{}{}^{}$, (2) $4s{}_{}{}^2{}_{}{}^{}S-4p{}_{}{}^2{}_{}{}^{}P_{}^o{}_{}{}^{}$, (3) $3d{}_{}{}^2{}_{}{}^{}D-4f{}_{}{}^2{}_{}{}^{}F_{}^o{}_{}{}^{}$, (4) $4p{}_{}{}^2{}_{}{}^{}P_{}^o{}_{}{}^{}-5s{}_{}{}^2{}_{}{}^{}S$, and (5) $4p{}_{}{}^2{}_{}{}^{}P_{}^o{}_{}{}^{}-4d{}_{}{}^2{}_{}{}^{}D$, are measured in an electromagnetically driven $T$ tube. Electron density [(0.3-1.4)×${10}^{17}$ ${\mathrm{cm}}^{-3\mathrm{}}$] is determined by laser interferometry, and from $\mathrm{H}\beta$ profiles. Temperature (16000-22000 K) is obtained from the intensity ratios of Si iii and Si ii lines, and from Boltzmann slopes of Ne i lines. Results are compared with other experimental and theoretical data.