Preparation, electrical properties and annealing of ZnGeAs2
- 1 January 1986
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 47 (1) , 37-43
- https://doi.org/10.1016/0022-3697(86)90174-5
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Electrical properties of H+-irradiated p-ZnGeAs2Physica Status Solidi (a), 1983
- ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2Applied Physics Letters, 1976
- Preparation and properties of ZnGeAs2Materials Research Bulletin, 1974
- Self‐Activated Semiconductivity in CdS Single CrystalsPhysica Status Solidi (b), 1963