Preparation and properties of ZnGeAs2
- 30 November 1974
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 9 (11) , 1511-1515
- https://doi.org/10.1016/0025-5408(74)90098-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The melt growth and doping of CdGeP2Journal of Electronic Materials, 1973
- Band Structure of ZnGeand ZnSi— Ternary Compounds with Pseudodirect Energy GapsPhysical Review Letters, 1973
- Negative Crystal-Field Splitting of the Valence Bands in CdSnPhysical Review Letters, 1970
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Semiconducting AIIBIVC CompoundsPhysica Status Solidi (b), 1967