Photoluminescence in nitrogen-doped gallium arsenide phosphide (GaAs1−xPx : N) for 0.6<x<1
- 1 February 1978
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (2) , 804-808
- https://doi.org/10.1063/1.324662
Abstract
In GaAs1−xPx : N, the composition parameter x strongly affects both the spectral position of the photoluminescence and its absolute intensity. There has previously been some controversy in the literature regarding the identification of the observed emission. The present work describes the changes in wavelength, intensity, and relative strength of spectral features at 77 and 296 K as a function of alloy composition in the range 0.6<x<1. The edge emission at 77 K can be identified in terms of contributions from isolated nitrogen atoms and from pairs of nitrogen atoms, together with optical‐phonon replicas of the exciton transitions.This publication has 16 references indexed in Scilit:
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