Defect structures of ion-implanted ?-tin
- 1 December 1980
- journal article
- research article
- Published by Springer Nature in Zeitschrift für Physik B Condensed Matter
- Vol. 38 (4) , 313-326
- https://doi.org/10.1007/bf01315323
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Nuclear data sheets for A = 119Nuclear Data Sheets, 1979
- Lattice location of Te in laser-annealed Te-implanted siliconJournal of Applied Physics, 1978
- Calibration of the isomer shift for119SnPhysica Status Solidi (b), 1977
- Covalency effects on implanted119Sn in group IV semiconductors studied by Mössbauer and channeling experimentsHyperfine Interactions, 1975
- Interpretation of isomer shifts of substitutional119Sn and129I in group IV semiconductorsHyperfine Interactions, 1975
- Direct comparison of Mössbauer and channeling studies of implanted119sn in silicon single crystalsRadiation Effects, 1975
- Evidence of an atomic displacement process in electron irradiated α-tinPhysics Letters A, 1972
- Hyperfine Interactions ofAtoms in Rare-Gas Matrices at 4.2 KPhysical Review B, 1972
- The thermodynamic and optical properties of germanium, silicon, diamond and gallium arsenideProceedings of the Physical Society, 1966
- The preparation of gray tin single crystals by transformation of tin-mercury alloysActa Metallurgica, 1962