Thermal analysis of laser damage in thin-film photoconductors
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (7) , 2867-2874
- https://doi.org/10.1063/1.323063
Abstract
A closed‐form thermal model is presented which describes heat transfer in thin‐film photoconductors under laser irradiation. Previously published thermal models for laser damage are not valid for thin‐film detectors fabricated with thick protective layers. In these detectors it is necessary to take into account heat diffusion from the absorbing film into the protective layer as well as the substrate. The thermal model was validated by measuring the damage thresholds of PbS and PbSe photoconductors and comparing theoretical and experimental results. The model was then used to analyze the thermal response of thin‐film detectors fabricated with different substrates and thermal coupling parameters. It is shown that considerable improvement in the performance of thin‐film photoconductors under high thermal loading can be achieved.This publication has 7 references indexed in Scilit:
- A generalized thermal model for laser damage in infrared detectorsJournal of Applied Physics, 1976
- Thermal modelling of laser damage in 8–14-μm HgCdTe photoconductive and PbSnTe photovoltaic detectorsJournal of Applied Physics, 1975
- Photoconductive properties of chemically deposited PbS with dielectric overcoatingsJournal of Applied Physics, 1975
- 0.1 ev HgCdTe photodetectorsInfrared Physics, 1975
- Optical radiation damage of SBN materials and pyroelectric detectors at 10.6 μmJournal of Applied Physics, 1975
- ``Ultraviolet-Flash'' Effect in Chemically Deposited PbS LayersJournal of Applied Physics, 1970
- Film-Type Infrared PhotoconductorsProceedings of the IRE, 1959