Electron effective masses and mobilities in high-purity 6H–SiC chemical vapor deposition layers
- 19 December 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (25) , 3209-3211
- https://doi.org/10.1063/1.112956
Abstract
The first observation of cyclotron resonance in 6H-SiC by optically detected cyclotron resonance (ODCR) spectroscopy at X-band microwave frequency is reported. High purity undoped, n-type 6H-SiC layers grown by chemical vapor deposition (CVD), with residual doping concentrations in the 1014–1015 cm−3 range, were investigated. Effective mass values were determined as m*⊥=(0.42±0.02)m0 and m*∥=(2.0±0.2)m0. From the fit of the ODCR line shape, a remarkably high mobility at 6 K was deduced: μ⊥≊1.1×105 cm2/V s for electrons in the basal plane. The anisotropy of the effective mass and the carrier mobility is discussed in comparison with previously reported data.This publication has 10 references indexed in Scilit:
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