Possible lifetime-limiting defect in 6H SiC
- 21 November 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (21) , 2687-2689
- https://doi.org/10.1063/1.112962
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Dynamics of the nitrogen-bound excitons in 6HSiCPhysical Review B, 1994
- Thin films and devices of diamond, silicon carbide and gallium nitridePhysica B: Condensed Matter, 1993
- Direct observation of intercenter charge transfer in dominant nonradiative recombination channels in siliconPhysical Review Letters, 1991
- Role of free carriers in the application of optically detected magnetic resonance for studies of defects in siliconApplied Physics A, 1991
- ODMR study of recombination processes in ionic crystals and silicon carbideApplied Magnetic Resonance, 1991
- Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbideApplied Physics Letters, 1990
- Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductorsAdvances in Physics, 1981