Particle Damage Effects in GaAs JFET Test Structures

1 January 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 33 (6) , 1435-1441
https://doi.org/10.1109/tns.1986.4334619

Abstract

Damage measurements on specially designed ion implanted GaAs JFET, resistor, and Hall-effect test structures using neutrons, protons, helium ions, and sulfur ions have shown the relationship of damage rates with particle type and implant dose.

Keywords

GALLIUM ARSENIDE
NEUTRONS
IMPLANTS
CIRCUIT TESTING
DOPING
DEGRADATION
RESISTORS
ION IMPLANTATION
MICROELECTRONICS
INTRUSION DETECTION

This publication has 4 references indexed in Scilit:

Radiation Damage Effects of Electrons and H, He, O, Cl and Cu Ions on GaAs JFETs
IEEE Transactions on Nuclear Science, 1985
THE STOPPING AND RANGE OF IONS IN SOLIDS
Published by Elsevier ,1984
Disorder production in Si⁺implanted InP
Radiation Effects, 1984
Radiation Effects in Gaas Junction Field-Effect Transistors
IEEE Transactions on Nuclear Science, 1980