Growth of single domain GaAs/fluoride/Si structures
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 398-402
- https://doi.org/10.1016/0022-0248(89)90428-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Flattening the Surface of CaF2/Si(100) Structures by Post-Growth AnnealingJapanese Journal of Applied Physics, 1988
- Antiphase disorder in epitaxial GaAs films grown on CaxSr1−xF2 (100) with higher crystallographic symmetryApplied Physics Letters, 1986
- Lattice matching at elevated substrate temperature for growth of GaAs films with good electrical properties on CaxSr1−xF2/GaAs(100) structuresApplied Physics Letters, 1986
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF2 and GaAsJapanese Journal of Applied Physics, 1986