Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor
- 4 December 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (23) , 3845-3847
- https://doi.org/10.1063/1.1331090
Abstract
We investigate the tunneling shot noise limits on the sensitivity of a micromechanical displacement detector based on a metal junction, radio-frequency single-electron transistor (rf SET). In contrast with the charge sensitivity of the rf-SET electrometer, the displacement sensitivity improves with increasing gate voltage bias and, with a suitably optimized rf SET, displacement sensitivities of 10−6 Å/Hz may be possible.Keywords
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