Carrier transport and storage effects in Au ion implanted SiO2 structures
- 30 September 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (9) , 979-986
- https://doi.org/10.1016/0038-1101(72)90139-6
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Effect of O+ and Ne+ Implantation on the Surface Characteristics of Thermally Oxidized SiJournal of Applied Physics, 1970
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969
- CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENTApplied Physics Letters, 1969
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969
- MEMORY BEHAVIOR OF AN MNS CAPACITORApplied Physics Letters, 1968
- Tunneling in metal-oxide-silicon structuresSolid-State Electronics, 1967
- A Floating Gate and Its Application to Memory DevicesBell System Technical Journal, 1967
- Ideal MOS Curves for SiliconBell System Technical Journal, 1966
- GOLD DIFFUSIVITIES IN SiO2 AND Si USING THE MOS STRUCTUREApplied Physics Letters, 1966