Degradation of high-radiance Ga1−xAlxAs LED’s
- 1 November 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (9) , 627-629
- https://doi.org/10.1063/1.89776
Abstract
The slow degradation of single‐heterostructure Ga1−xAlxAs LED’s has been investigated. The samples which show the fast degradation are completely rejected by the selection of DLD‐free LED’s. Selection procedures and the results of accelerated aging tests for over 10 000 h are presented. The activation energy of the slow degradation is found to be 0.57 eV. Extrapolated room‐temperature half‐life in excess of 5×106 h is estimated. The degradation coefficients are not affected significantly by the operating current density (3.5–10 kA/cm2).Keywords
This publication has 3 references indexed in Scilit:
- High-efficiency long-lived GaAlAs LED's for fiber-optical communicationsIEEE Transactions on Electron Devices, 1977
- Proton bombarded double heterostructure LED’sJournal of Electronic Materials, 1977
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964