Proton bombarded double heterostructure LED’s
- 1 March 1977
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 6 (2) , 173-193
- https://doi.org/10.1007/bf02660382
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- High-radiance small-area gallium–indium-arsenide 1.06 μm light-emitting diodesElectronics Letters, 1975
- Reliability of DH GaAs lasers at elevated temperaturesApplied Physics Letters, 1975
- Te and Ge — doping studies in Ga1−xAlxAsJournal of Electronic Materials, 1975
- High-power long-lived double heterostructure LED's for optical communicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- Direct-modulation efficiency of LED's for optical fiber transmission applicationsProceedings of the IEEE, 1975
- Continuous operation of GaAs–Ga1 − xAlxAs double-heterostructure lasers with 30 °C half-lives exceeding 1000 hApplied Physics Letters, 1973
- Reproducible Liquid-Phase-Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser DiodesJournal of Applied Physics, 1972
- Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operationProceedings of the IEEE, 1972
- Radiance of small-area high-current-density electroluminescent diodesProceedings of the IEEE, 1972
- Small-area, double-heterostructure aluminum-gallium arsenide electroluminescent diode sources for optical-fiber transmission linesOptics Communications, 1971