Ranges in silicon of ions with atomic numbers 62 ⩽ Z1 ⩽ 66 at 100 keV
- 19 April 1976
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 56 (5) , 371-373
- https://doi.org/10.1016/0375-9601(76)90376-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The optimization of a rutherford backscattering geometry for enhanced depth resolutionNuclear Instruments and Methods, 1975
- Range parameters of heavy ions at 10 and 35 keV in siliconPhysics Letters A, 1975
- Effects of inner shell excitation on the stopping power of solids for heavy ionsPhysics Letters A, 1974
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974
- Heavy ion ranges at 100 keV in aluminiumPhysics Letters A, 1973
- Periodic Dependence of the Electronic Stopping Cross Section for Energetic Heavy Ions in SolidsPhysical Review B, 1968
- The Z1-dependence of electronic stoppingPhysics Letters A, 1968
- Channeling of medium-mass ions through siliconCanadian Journal of Physics, 1968
- Low-energy electronic stopping cross sections in nitrogen and argonCanadian Journal of Physics, 1968